Invention Grant
- Patent Title: Method of manufacturing semiconductor device
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Application No.: US15053383Application Date: 2016-02-25
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Publication No.: US09607887B1Publication Date: 2017-03-28
- Inventor: Hideki Kanai
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabrow, Garrett & Dunner LLP
- Main IPC: H01L21/467
- IPC: H01L21/467 ; H01L21/768 ; H01L21/02 ; H01L21/308
Abstract:
In one embodiment, a method of manufacturing a semiconductor device includes forming a convex portion including an interconnect and a first film above a substrate, forming a second film on the convex portion, and forming a concave portion having a first bottom face of the first film and a second bottom face lower than the upper face of the first film in the second film. The method further includes forming a polymer film in the concave portion by using a polymer that includes first and second portions respectively having first and second affinities for the first film, phase-separating the first and second portions to form a first pattern containing the first portion and located on the first bottom face and a second pattern containing the second portion and located on the second bottom face in the polymer film, and selectively removing the first or second pattern.
Public/Granted literature
- US20170069531A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-03-09
Information query
IPC分类:
