Invention Grant
- Patent Title: Aluminum interconnection apparatus
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Application No.: US14307089Application Date: 2014-06-17
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Publication No.: US09607891B2Publication Date: 2017-03-28
- Inventor: Ching-Fu Yeh , Hsiang-Huan Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/532
Abstract:
An aluminum interconnection apparatus comprises a metal structure formed over a substrate, wherein the metal structure is formed of a copper and aluminum alloy, a first alloy layer formed underneath the metal structure and a first barrier layer formed underneath the first alloy layer, wherein the first barrier layer is generated by a reaction between the first alloy layer and an adjacent dielectric layer during a thermal process.
Public/Granted literature
- US20140295663A1 Aluminum Interconnection Apparatus Public/Granted day:2014-10-02
Information query
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