- Patent Title: Limiting adjustment of polishing rates during substrate polishing
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Application No.: US15257785Application Date: 2016-09-06
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Publication No.: US09607910B2Publication Date: 2017-03-28
- Inventor: Dominic J. Benvegnu , Benjamin Cherian , Sivakumar Dhandapani , Harry Q. Lee
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/66
Abstract:
A method of controlling polishing includes polishing a region of a substrate at a first polishing rate, measuring a sequence of characterizing values for the region of the substrate during polishing with an in-situ monitoring system, determining a polishing rate adjustment for each of a plurality of adjustment times prior to a polishing endpoint time, and adjusting a polishing parameter to polish the substrate at a second polishing rate. The time period is greater than a period between the adjustment times and the projected time is before the polishing endpoint time. The second polishing rate is the first polishing rate as adjusted by the polishing rate adjustment.
Public/Granted literature
- US20160372388A1 Limiting Adjustment of Polishing Rates During Substrate Polishing Public/Granted day:2016-12-22
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