Invention Grant
- Patent Title: Method of manufacturing semiconductor device and semiconductor device
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Application No.: US15154954Application Date: 2016-05-14
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Publication No.: US09607954B2Publication Date: 2017-03-28
- Inventor: Akira Yajima
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2015-155138 20150805
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/00

Abstract:
Object is to prevent a coupling failure between a rewiring and a coupling member for coupling to outside. A passivation film and a first polyimide film are formed so as to cover a wiring layer. A first opening portion is formed in the first polyimide film. A rewiring is formed on the first polyimide film so as to be coupled to the wiring layer via the first opening portion. A second polyimide film that covers the rewiring and has a second opening portion communicated with the rewiring is formed. A palladium film is formed as a barrier film by sputtering on a portion of the surface of the rewiring at which the second opening portion exists. A solder ball is coupled to the palladium film.
Public/Granted literature
- US20170040267A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2017-02-09
Information query
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