Invention Grant
- Patent Title: Thin-film transistor and fabricating method thereof, array substrate and display apparatus
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Application No.: US14778939Application Date: 2015-03-16
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Publication No.: US09608011B2Publication Date: 2017-03-28
- Inventor: Ying Zhang , Xin Li , Hong Zhu , Hongjun Yu
- Applicant: Boe Technology Group Co., Ltd. , Beijing Boe Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Beijing CN Beijing
- Assignee: Boe Technology Group Co., Ltd.,Beijing Boe Optoelectronics Technology Co., Ltd.
- Current Assignee: Boe Technology Group Co., Ltd.,Beijing Boe Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Beijing CN Beijing
- Agency: Calfee, Halter & Griswold LLP
- Priority: CN201410539188 20141013
- International Application: PCT/CN2015/074270 WO 20150316
- International Announcement: WO2016/058321 WO 20160421
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/00 ; H01L27/12 ; H01L29/786 ; H01L29/06 ; H01L29/45

Abstract:
The present invention discloses a thin-film transistor and a fabricating method thereof, an array substrate and a display apparatus. An active layer in the thin-film transistor comprises a first active layer and a second active layer which are stacked; wherein, an orthographic projection of the first active layer on the substrate covers orthographic projections of the source electrode, the drain electrode as well as a gap located between the source electrode and the drain electrode on the substrate, and covers an orthographic projection of the gate electrode on the substrate; the second active layer is located at the gap between the source electrode and the drain electrode, and an orthographic projection of the second active layer on the substrate is located in a region where the orthographic projection of the gate electrode on the substrate is located.
Public/Granted literature
- US20160307919A1 THIN-FILM TRANSISTOR AND FABRICATING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY APPARATUS Public/Granted day:2016-10-20
Information query
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