Invention Grant
- Patent Title: Semiconductor device
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Application No.: US14792027Application Date: 2015-07-06
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Publication No.: US09608072B2Publication Date: 2017-03-28
- Inventor: Hiroshi Kanno , Hitoshi Sumida , Masaharu Yamaji
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Priority: JP2014-166567 20140819
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/739 ; H01L29/06 ; H01L27/02
Abstract:
A semiconductor device is provided with a first well region of a first conduction type having a first voltage (voltage VB) applied thereto, a second well region of a second conduction type formed in the surface layer section of the first well region and having a second voltage (voltage VS) different from the first voltage applied thereto, and a charge extracting region of the first conduction type formed in the surface layer section of the second well region and having the first voltage applied thereto. This inhibits the operation of a parasitic bipolar transistor.
Public/Granted literature
- US20160056148A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-25
Information query
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