Invention Grant
- Patent Title: Emitter contact epitaxial structure and ohmic contact formation for heterojunction bipolar transistor
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Application No.: US14926889Application Date: 2015-10-29
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Publication No.: US09608084B2Publication Date: 2017-03-28
- Inventor: Timothy S. Henderson , Sheila K. Hurtt
- Applicant: TriQuint Semiconductor, Inc.
- Applicant Address: US NC Greensboro
- Assignee: Qorvo US, Inc.
- Current Assignee: Qorvo US, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/737 ; H01L29/417 ; H01L29/423 ; H01L29/45 ; H01L29/08 ; H01L21/768
Abstract:
Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a diffusion control layer as part of an emitter epitaxial structure. The IC device may utilize a common metallization scheme to simultaneously form an emitter contact and a base contact. Other embodiments may also be described and/or claimed.
Public/Granted literature
- US20160049493A1 EMITTER CONTACT EPITAXIAL STRUCTURE AND OHMIC CONTACT FORMATION FOR HETEROJUNCTION BIPOLAR TRANSISTOR Public/Granted day:2016-02-18
Information query
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