Invention Grant
- Patent Title: Insulated gate bipolar transistor amplifier circuit
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Application No.: US14889876Application Date: 2014-05-12
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Publication No.: US09608097B2Publication Date: 2017-03-28
- Inventor: Klas-Hakan Eklund
- Applicant: K. EKLUND INNOVATION
- Applicant Address: SE Uppsala
- Assignee: K.EKLUND INNOVATION
- Current Assignee: K.EKLUND INNOVATION
- Current Assignee Address: SE Uppsala
- Agency: Young & Thompson
- Priority: SE1350595 20130516
- International Application: PCT/SE2014/050577 WO 20140512
- International Announcement: WO2014/185852 WO 20141120
- Main IPC: H01L29/73
- IPC: H01L29/73 ; H01L29/739 ; H01L23/535 ; H01L29/06 ; H01L29/08 ; H01L29/10 ; H01L27/06
Abstract:
The present invention provides a lateral IGBT transistor comprising a bipolar transistor and an IGFET. The lateral IGBT comprises a low resistive connection between the drain of the IGFET and the base of the bipolar transistor, and an isolating layer arranged between the IGFET and the bipolar transistor. The novel structure provides a device which is immune to latch and gives high gain and reliability. The structure can be realized with standard CMOS technology available at foundries.
Public/Granted literature
- US20160093723A1 INSULATED GATE BIPOLAR TRANSISTOR AMPLIFIER CIRCUIT Public/Granted day:2016-03-31
Information query
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