Invention Grant
- Patent Title: Semiconductor device
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Application No.: US13976757Application Date: 2012-01-04
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Publication No.: US09608101B2Publication Date: 2017-03-28
- Inventor: Andras Kis , Branimir Radisavljevic
- Applicant: Andras Kis , Branimir Radisavljevic
- Applicant Address: CH
- Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Current Assignee: ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE (EPFL)
- Current Assignee Address: CH
- Agency: Sheridan Ross P.C.
- Priority: WOPCT/IB2011/050021 20110104
- International Application: PCT/IB2012/050036 WO 20120104
- International Announcement: WO2012/093360 WO 20120712
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L29/786
Abstract:
The present invention concerns semiconductor devices comprising a source electrode, a drain electrode and a semiconducting layer consisting of a single or double 2-dimensional layer(s) made from one of the following materials: MoS2, MoSe2, WS2, WSe2, MoTe2 or WTe2. Replacing a stack by only one or two 2-dimensional layer(s) of MoS2, MoSe2, WS2, or WSe2, MoTe2 or WTe2 provides an enhanced electrostatic control, low power dissipation, direct band gap and tunability.
Public/Granted literature
- US20140197459A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-07-17
Information query
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