Invention Grant
- Patent Title: Recessed transistors containing ferroelectric material
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Application No.: US14850824Application Date: 2015-09-10
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Publication No.: US09608111B2Publication Date: 2017-03-28
- Inventor: Durai Vishak Nirmal Ramaswamy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micro Technology, Inc.
- Current Assignee: Micro Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/115 ; H01L29/49 ; H01L29/788 ; H01L29/423 ; H01L29/51 ; H01L27/11521 ; H01L21/28 ; H01L29/66 ; H01L27/1159 ; H01L27/11597
Abstract:
Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an interior of the first insulative structure, and a ferroelectric structure lines an interior of the first conductive structure. A second conductive structure is within a lower region of the ferroelectric structure, and the second conductive structure has an uppermost surface beneath an uppermost surface of the first conductive structure. A second insulative structure is over the second conductive structure and within the ferroelectric structure. A pair of source/drain regions are adjacent an upper region of the first insulative structure and are on opposing sides of the first insulative structure from one another.
Public/Granted literature
- US20160099354A1 Recessed Transistors Containing Ferroelectric Material Public/Granted day:2016-04-07
Information query
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