Invention Grant
- Patent Title: Body of doped semiconductor material having scattering centers of non-doping atoms of foreign matter disposed between two layers of opposing conductivities
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Application No.: US10392509Application Date: 2003-03-20
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Publication No.: US09608128B2Publication Date: 2017-03-28
- Inventor: Veli Kartal , Hans-Joachim Schulze
- Applicant: Veli Kartal , Hans-Joachim Schulze
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE10048437 20000929
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L29/861 ; H01L29/32
Abstract:
A method for producing a body (1) consisting of doped semiconductor material having a defined mean free path length (lambda n) for free charge carriers (CP), and a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n) is disclosed. An epitactic crystal layer (20) consisting of doped semiconductor material is produced on a substrate crystal (10) consisting of semiconductor material having the defined mean free path length (lambda n), said crystal layer having, at least locally, a mean free path length (lambda r) for the free charge carriers (CP) which is smaller than the defined mean free path length (lambda n). The body (1) can also be produced by joining two crystal bodies (10′, 10″) consisting of doped semiconductor material.
Public/Granted literature
- US20030154912A1 Method of producing a body of semiconductor material having a reduced mean free path length Public/Granted day:2003-08-21
Information query
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