Invention Grant
- Patent Title: Light emitting diode
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Application No.: US14734835Application Date: 2015-06-09
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Publication No.: US09608168B2Publication Date: 2017-03-28
- Inventor: Jong Hyeon Chae
- Applicant: Seoul Viosys Co., Ltd.
- Applicant Address: KR Ansan-si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2014-0072356 20140613; KR10-2014-0081058 20140630
- Main IPC: H01L33/38
- IPC: H01L33/38 ; H01L33/40 ; H01L33/42 ; H01L33/20

Abstract:
Exemplary embodiments provide a light emitting diode that includes: at least one lower electrode providing a passage for electric current; a light emitting structure placed over the at least one lower electrode to be electrically connected to the lower electrode, the light emitting structure is disposed to form at least one via-hole; a reflective electrode layer placed between the at least one lower electrode and the light emitting structure; and an electrode pattern formed around the light emitting structure and electrically connecting the lower electrode to the light emitting structure through the via-hole.
Public/Granted literature
- US20150364653A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME Public/Granted day:2015-12-17
Information query
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