Invention Grant
- Patent Title: Method of manufacturing light emitting element
-
Application No.: US15141164Application Date: 2016-04-28
-
Publication No.: US09608170B2Publication Date: 2017-03-28
- Inventor: Shun Kitahama , Keiji Emura , Shinichi Daikoku
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Foley & Lardner LLP
- Priority: JP2014-148289 20140718
- Main IPC: H01L33/42
- IPC: H01L33/42 ; H01L33/40 ; H01L33/44 ; H01L33/38 ; H01L33/32 ; H01L33/46

Abstract:
A method of manufacturing a semiconductor light emitting element includes providing a semiconductor stacked layer body; forming an insulating layer on a portion of the semiconductor stacked layer body; forming a light-transmissive electrode covering an upper surface of the semiconductor stacked layer body and an upper surface of the insulating layer, and on a region at least partially overlapping a region for disposing an extending portion in a plan view; forming a light reflecting layer in each of the openings of the light-transmissive electrode; forming a protective layer on a main surface side of the semiconductor stacked layer body; forming a mask on an upper surface of the protective layer except for the region for forming the pad electrode; etching the protective layer to form an opening in the protective layer; and forming a pad electrode in the opening of the protective layer.
Public/Granted literature
- US20160240742A1 METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT Public/Granted day:2016-08-18
Information query
IPC分类: