Invention Grant
- Patent Title: Magnetic tunnel junction device
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Application No.: US14820820Application Date: 2015-08-07
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Publication No.: US09608195B2Publication Date: 2017-03-28
- Inventor: Wei-Hang Huang , Chern-Yow Hsu , Shih-Chang Liu , Chia-Shiung Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/02 ; H01L43/08 ; H01L43/10
Abstract:
A device includes creating an opening in a dielectric layer that is disposed over a bottom electrode layer. A top electrode layer is disposed over the dielectric layer. A magnetic tunnel junction (MTJ) layer is formed in the opening over the bottom electrode layer.
Public/Granted literature
- US20150340596A1 Magnetic Tunnel Junction Device Public/Granted day:2015-11-26
Information query
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