- Patent Title: Body diode conduction optimization in MOSFET synchronous rectifier
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Application No.: US14678932Application Date: 2015-04-04
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Publication No.: US09608532B2Publication Date: 2017-03-28
- Inventor: Pitleong Wong , Yuancheng Ren , Xunwei Zhou
- Applicant: Pitleong Wong , Yuancheng Ren , Xunwei Zhou
- Applicant Address: CN Hangzhou
- Assignee: JoulWatt Technology Inc. Limited
- Current Assignee: JoulWatt Technology Inc. Limited
- Current Assignee Address: CN Hangzhou
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H02M1/38 ; H02M1/00 ; H02M3/158

Abstract:
To maximize power efficiency, dead time between “on” times of a synchronous rectifier (“SR”) MOSFET switch and a main switch for CCM operation in particular in isolated and non-isolated self-driven synchronous DC-DC converters needs to be optimized. To accomplish that objective, the latest conduction time t of a body diode of the SR MOSFET following conduction thereof is determined, compared with a selected fixed optimum period T1, and incrementally or decrementally adjusted in a subsequent switching cycle while t is unequal to T1, depending on whether t is shorter or longer than T1, so that t eventually is made substantially equal to T1 in length. This process is to be repeated continuously.
Public/Granted literature
- US20160294298A1 BODY DIODE CONDUCTION OPTIMIZATION IN MOSFET SYNCHRONOUS RECTIFIER Public/Granted day:2016-10-06
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