Invention Grant
- Patent Title: Negative high voltage hot switching circuit
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Application No.: US14965678Application Date: 2015-12-10
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Publication No.: US09608615B2Publication Date: 2017-03-28
- Inventor: Gary Peter Moscaluk , Bogdan I. Georgescu , Timothy Williams
- Applicant: Cypress Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee: CYPRESS SEMICONDUCTOR CORPORATION
- Current Assignee Address: US CA San Jose
- Main IPC: G11C16/00
- IPC: G11C16/00 ; H03K17/0412 ; G11C17/08 ; G11C11/417 ; G11C16/30 ; G11C11/22 ; H03K19/0185

Abstract:
A biasing circuit includes cascoded transistors including a first transistor and a second transistor. A first gate of the first transistor is coupled to a second gate of the second transistor at a first node. The circuit also includes a voltage control circuit coupled to at least one of the first transistor or the second transistor. The voltage control circuit is configured to change a voltage level of at least one of the first transistor or the second transistor to allow voltage domain transition of an output signal in view of a change in state of an input signal without ramping a supply signal of the biasing circuit.
Public/Granted literature
- US20160365849A1 NEGATIVE HIGH VOLTAGE HOT SWITCHING CIRCUIT Public/Granted day:2016-12-15
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