Invention Grant
- Patent Title: Drive device for insulated-gate semiconductor element, and power converter
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Application No.: US14854006Application Date: 2015-09-14
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Publication No.: US09608622B2Publication Date: 2017-03-28
- Inventor: Takahiro Mori
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-shi
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Rabin & Berdo, P.C.
- Priority: JP2013-139828 20130703
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H03K17/567 ; H02M1/088 ; H03K17/12 ; H03K17/14 ; H03K17/687

Abstract:
A driver circuit for turning ON and OFF one of two parallel-connected insulated-gate semiconductor elements includes a voltage control circuit that controls a level of a power supply voltage in response to a detected element temperature of the one semiconductor element, a constant current supply section, responsive to a drive signal, for supplying a constant current to a gate of the one semiconductor element to turn the one semiconductor element ON, the power supply voltage being supplied to the constant current supply section from the voltage control circuit, and a discharge circuit, responsive to the drive signal, for discharging an electric charge accumulated in the gate to turn the one semiconductor element OFF.
Public/Granted literature
- US20160006429A1 DRIVE DEVICE FOR INSULATED-GATE SEMICONDUCTOR ELEMENT, AND POWER CONVERTER Public/Granted day:2016-01-07
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