Manufacturing method of semiconductor device

Invention Grant

US09609251B2 Manufacturing method of semiconductor device 有权

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Patent Title: Manufacturing method of semiconductor device
Application No.: US14790989

Application Date: 2015-07-02
Publication No.: US09609251B2

Publication Date: 2017-03-28
Inventor: Ryuichi Mishima , Hideaki Ishino , Kenji Togo , Masatsugu Itahashi , Takehito Okabe
Applicant: CANON KABUSHIKI KAISHA
Applicant Address: JP Tokyo
Assignee: Canon Kabushiki Kaisha
Current Assignee: Canon Kabushiki Kaisha
Current Assignee Address: JP Tokyo
Agency: Canon U.S.A. Inc., IP Division
Priority: JP2011-223290 20111007
Main IPC: H01L31/062
IPC: H01L31/062 ; H04N5/3745 ; H01L27/088 ; H01L27/146 ; H01L31/0224 ; H01L21/8234 ; H01L27/06

Manufacturing method of semiconductor device

Abstract:

A drain of a first transistor is formed by performing ion implantation on a semiconductor substrate using a first member as a mask for a gate electrode of the first transistor. Further, ion implantation is performed on the gate electrode of the second transistor after thinning a second member.

Public/Granted literature

US20150304587A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2015-10-22

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062	...只是金属—绝缘体—半导体型势垒的