Invention Grant
- Patent Title: Plasma activated conformal dielectric film deposition
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Application No.: US13224240Application Date: 2011-09-01
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Publication No.: US09611544B2Publication Date: 2017-04-04
- Inventor: Adrien LaVoie , Mandyam Sriram
- Applicant: Adrien LaVoie , Mandyam Sriram
- Applicant Address: US CA Fremont
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: C23C16/04
- IPC: C23C16/04 ; C23C16/455 ; C23C16/34 ; C23C16/40 ; C23C16/56 ; H01L21/02 ; H01L21/768 ; H01L21/762
Abstract:
Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.
Public/Granted literature
- US20120009802A1 PLASMA ACTIVATED CONFORMAL DIELECTRIC FILM DEPOSITION Public/Granted day:2012-01-12
Information query
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