Invention Grant
- Patent Title: Method and apparatus for forming thin oxide film
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Application No.: US15069842Application Date: 2016-03-14
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Publication No.: US09611547B2Publication Date: 2017-04-04
- Inventor: Hyungjun Kim , Taewook Nam
- Applicant: Industry-Academic Cooperation Foundation, Yonsei University
- Applicant Address: KR Seoul
- Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee: Industry-Academic Cooperation Foundation, Yonsei University
- Current Assignee Address: KR Seoul
- Agency: Carter, DeLuca, Farrell & Schmidt, LLP
- Priority: KR10-2015-0037374 20150318
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/02 ; H01L21/285 ; C23C16/448 ; C23C16/40
Abstract:
Disclosed is a method and apparatus for forming a thin oxide film. The method includes reacting metallic precursors with a reactant, which contains an OH radical, to form the thin oxide film on a substrate.
Public/Granted literature
- US20160273107A1 METHOD AND APPARATUS FOR FORMING THIN OXIDE FILM Public/Granted day:2016-09-22
Information query
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