- Patent Title: Semiconductor optical waveguide device with an anti-reflection diffraction grating formed on both lateral sides of a core layer along a direction of optical propagation
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Application No.: US14663768Application Date: 2015-03-20
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Publication No.: US09612411B2Publication Date: 2017-04-04
- Inventor: Nobuaki Hatori , Masashige Ishizaka , Takanori Shimizu
- Applicant: FUJITSU LIMITED , NEC Corporation
- Applicant Address: JP Kawasaki JP Tokyo
- Assignee: FUJITSU LIMITED,NEC CORPORATION
- Current Assignee: FUJITSU LIMITED,NEC CORPORATION
- Current Assignee Address: JP Kawasaki JP Tokyo
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2014-073357 20140331
- Main IPC: G02B6/42
- IPC: G02B6/42 ; G02B6/124
Abstract:
Light that returns through reflection from the optical connection portion between a semiconductor optical waveguide and an optically functional element is reduced through the use of a simplified structure in a semiconductor optical waveguide device. The device is provided with an anti-reflection diffraction grating having the period to prevent light that has been led through the semiconductor optical waveguide towards the portion connected to the optically functional element from being reflected in the direction from which the light has been led.
Public/Granted literature
- US20150277072A1 SEMICONDUCTOR OPTICAL WAVEGUIDE DEVICE Public/Granted day:2015-10-01
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