A semiconductor device 1 according to the present invention includes a first electrode G (g1) formed on a substrate B, a first insulation film GI to cover the first electrode g1, a semiconductor film SF including a channel CH, an etching stopper film ES, and a second electrode S (s3). The semiconductor film SF is formed on the first insulation film GI with overlapping the first electrode g1 so that an edge portion SF1 thereof projects outwardly from the first electrode g1 in a plan view. The etching stopper film ES is formed of an insulation film and formed on the semiconductor film SF and the first insulation film GI to cover the channel CH. The etching stopper film ES includes a hole H (hd) in which the edge portion SF1 of the semiconductor film SF is and through which a surface of a portion of the semiconductor film SF near the channel CH is exposed in a plan view. The second electrode S (s3) is disposed on the semiconductor film SF to cover the surface of the portion of the semiconductor film SF exposed through the hole H (hd).