Invention Grant
- Patent Title: Structure and method for reflective-type mask
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Application No.: US14726154Application Date: 2015-05-29
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Publication No.: US09612523B2Publication Date: 2017-04-04
- Inventor: Chih-Tsung Shih , Chi-Lun Lu , Jeng-Horng Chen , Chia-Chen Chen , Shinn-Sheng Yu , Anthony Yen , Wei-Hung Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/24 ; G03F7/20 ; G03F1/76
Abstract:
A reflective mask includes a substrate; a reflective multilayer formed on the substrate; an absorber layer formed on the reflective multilayer, wherein the absorber layer is patterned to have openings according to an integrated circuit layout; and a protection layer formed over the reflective multilayer within the openings.
Public/Granted literature
- US20150261082A1 Structure and Method for Reflective-Type Mask Public/Granted day:2015-09-17
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