Disclosed are methods and apparatus for qualifying a photolithographic reticle. A reticle inspection tool is used to acquire at least two images at different imaging configurations from each pattern area of the reticle. A reticle pattern is reconstructed based on each at least two images from each pattern area of the reticle. For each reconstructed reticle pattern, a lithographic process with two or more different process conditions is modeled on such reconstructed reticle pattern to generate two or more corresponding modeled test wafer patterns. Each two or more modelled test wafer patterns is analyzed to identify hot spot patterns of the reticle patterns that are susceptible to the different process conditions altering wafer patterns formed with such hot spot patterns.