Invention Grant
- Patent Title: Touch sensing structure
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Application No.: US14535331Application Date: 2014-11-07
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Publication No.: US09612698B2Publication Date: 2017-04-04
- Inventor: Sin-An Chen , Sheng-Wei Chen , Chih-Chia Chang , Wei-Yi Lin
- Applicant: Industrial Technology Research Institute
- Applicant Address: TW Hsinchu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW103113202A 20140410
- Main IPC: G06F3/041
- IPC: G06F3/041 ; G06F3/045 ; G06F3/044

Abstract:
A touch sensing structure including a plastic substrate, a buffer layer, an electrode layer, an insulation unit, and a passivation layer is provided. The buffer layer is disposed on the plastic substrate, and the electrode layer includes a first patterned transparent electrode layer and a second patterned transparent electrode layer. The first patterned transparent electrode layer is disposed on the buffer layer, and the second patterned transparent electrode layer is disposed on the buffer layer. The insulation unit insulates the first patterned transparent electrode layer and the second patterned transparent electrode layer, and the passivation layer is disposed on the electrode layer. Twice a total optical path length of the electrode layer and the passivation layer along a direction substantially parallel to a normal direction of the plastic substrate ranges from 1000 nm to 2500 nm.
Public/Granted literature
- US20150293646A1 TOUCH SENSING STRUCTURE Public/Granted day:2015-10-15
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