Providing for improved cell longevity for two-terminal memory devices is described herein. By way of example, wear leveling and management of array operations is provided to reduce an average number of set or reset cycles employed for programming new data to a two-terminal memory device. Reduction in set and reset cycles can facilitate reduced wear over time, increasing longevity of the memory device and enabling larger numbers of lifetime array operations. Wear leveling can comprise comparing existing data stored within a target set of memory cells, to new data to be written to the target cells, and changing only cells having different values between the existing and new data. In some examples, new data can be inverted to reduce a number of program or erase pulses required to program the new data over the existing data, among other examples of disclosed wear leveling.