An array structure of a single-poly nonvolatile memory includes a first MTP section, a first OTP section and a ROM section. The first MTP section includes a plurality of MTP cells, the first OTP section includes a plurality of OTP cells and the first ROM section includes a plurality of ROM cells. The first MTP is connected to a first word line, a first source line, a first erase line and a plurality of bit lines. The first OTP section is connected to a second word line, a second source line and the plurality of bit lines shared with the first MTP section. The first ROM section is connected to a third word line, a third source line and the plurality of bit lines shared with the first MTP section.