Invention Grant
- Patent Title: Differential current sensing scheme for magnetic random access memory
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Application No.: US14987503Application Date: 2016-01-04
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Publication No.: US09613672B2Publication Date: 2017-04-04
- Inventor: Sergiy Romanovskyy
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C11/16 ; G11C7/06 ; G11C11/4091 ; G11C11/22 ; G11C7/14

Abstract:
A circuit includes first and second reference cells and a current sense amplifier. The first and second reference cells are configured to store opposite logic values, respectively. The current sense amplifier is configured with a first node and a second node for currents therethrough to be compared with each other. The current sense amplifier includes a multiplexer configured to couple the first reference cell or the second reference cell to the first node of the current sense amplifier, and couple the second reference cell or the first reference cell to the second node of the current sense amplifier for reading bits stored in the first reference cell and the second reference cell.
Public/Granted literature
- US20160118100A1 DIFFERENTIAL CURRENT SENSING SCHEME FOR MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2016-04-28
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