Two-terminal memory can be set to a first state (e.g., conductive state) in response to a program pulse, or set a second state (e.g., resistive state) in response to an erase pulse. These pulses generally produce a voltage difference between the two terminals of the memory cell. Certain electrical characteristics associated with the pulses can be manipulated in order to enhance the efficacy of the pulse. For example, the pulse can be enhanced or improved to reduce power-consumption associated with the pulse, reduce a number of pulses used to successfully set the state of the memory cell, or to improve Ion distribution associated with active metal particles included in the memory cell.