A method includes sending a number of program/erase cycles from a memory of control logic of a memory device to a counter of the control logic, where the number of program/erase cycles has been previously applied to one or more memory cells of an array of memory cells of the memory device, using the counter to increment the number of program/erase cycles each time an additional program/erase cycle is applied to the one or more memory cells, using compare logic of the control logic to compare the incremented number of program/erase cycles to a numerical value, and using starting-voltage level control logic of the control logic to adjust a program starting voltage level and/or an erase starting voltage level based on the comparison of the incremented number of program/erase cycles to the numerical value.