Invention Grant
- Patent Title: Multiple-time programmable memory
-
Application No.: US15298375Application Date: 2016-10-20
-
Publication No.: US09613710B2Publication Date: 2017-04-04
- Inventor: Hsu-Shun Chen , Cheng-Hsiung Kuo , Gu-Huan Li , Chung-Chieh Chen , Yu-Der Chih
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C16/26 ; G11C16/24 ; G11C16/04 ; G11C16/30 ; G11C11/16

Abstract:
A multiple-time programmable (MTP) structure is provided that can operate using a power supply with a supply voltage of 1.5 V to 5.5 V. When the supply voltage is above a first voltage, a first circuit is configured to induce a second constant voltage at a drain of a second transistor, and to induce the second constant voltage on a terminal in a third circuit. In some embodiments, the third circuit provides a third constant voltage on a gate of a third transistor. When the supply voltage is below the first voltage, a fifth circuit is configured to induce a fourth constant voltage on a terminal in the third circuit. The fourth constant voltage is substantially equal to the second constant voltage.
Public/Granted literature
- US20170040063A1 MULTIPLE-TIME PROGRAMMABLE MEMORY Public/Granted day:2017-02-09
Information query