According to one embodiment, a semiconductor memory device includes: first and second memory cells; first and second word lines coupled to the first and second memory cells, respectively. When data is read from the first memory cell, first and second voltages are applied to the first word line. A voltage of the second word line varies continuously by a first potential difference with time while the first voltage is applied to the first word line, and the voltage of the first word line varies continuously by a second potential difference with time while the second voltage is applied to the first word line.