Invention Grant
- Patent Title: Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
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Application No.: US14634280Application Date: 2015-02-27
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Publication No.: US09613798B2Publication Date: 2017-04-04
- Inventor: Ryuji Yamamoto , Yoshiro Hirose , Satoshi Shimamoto
- Applicant: HITACHI KOKUSAI ELECTRIC INC.
- Applicant Address: JP Tokyo
- Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee: HITACHI KOKUSAI ELECTRIC INC.
- Current Assignee Address: JP Tokyo
- Agency: Volpe and Koenig, P.C.
- Priority: JP2014-041965 20140304
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/02 ; C23C16/30 ; C23C16/34 ; C23C16/36 ; C23C16/455 ; C23C16/52

Abstract:
A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing: forming a first layer containing the first element and carbon by supplying a precursor gas having a chemical bond of the first element and carbon from a first supply part to the substrate in a process chamber, and forming a second layer by supplying a reaction gas containing the second element from a second supply part to the substrate in the process chamber and supplying a plasma-excited inert gas from a third supply part to the substrate in the process chamber to modify the first layer, the third supply part being different from the second supply part.
Public/Granted literature
- US20150255274A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM Public/Granted day:2015-09-10
Information query
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