Invention Grant
- Patent Title: Method for making epitaxial structure
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Application No.: US13593602Application Date: 2012-08-24
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Publication No.: US09613802B2Publication Date: 2017-04-04
- Inventor: Yang Wei , Shou-Shan Fan
- Applicant: Yang Wei , Shou-Shan Fan
- Applicant Address: CN Beijing TW New Taipei
- Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- Current Assignee Address: CN Beijing TW New Taipei
- Agent Steven M. Reiss
- Priority: CN201210085270 20120328
- Main IPC: C30B19/00
- IPC: C30B19/00 ; H01L21/02 ; C30B29/38 ; C30B25/10 ; C30B25/04 ; C30B25/00 ; C30B25/02

Abstract:
A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on the epitaxial growth surface. A carbon nanotube layer is placed on the buffer layer. A first epitaxial layer is epitaxially grown on the buffer layer. The substrate and the buffer layer are removed to expose a second epitaxial growth surface. A second epitaxial layer is epitaxially grown on the second epitaxial growth surface.
Public/Granted literature
- US20130255565A1 METHOD FOR MAKING EPITAXIAL STRUCTURE Public/Granted day:2013-10-03
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