Invention Grant
- Patent Title: Method of manufacturing semiconductor devices which allows reproducible thinning of a semiconductor body of the semiconductor devices
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Application No.: US14552461Application Date: 2014-11-24
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Publication No.: US09613804B2Publication Date: 2017-04-04
- Inventor: Peter Irsigler , Thomas Neidhart , Guenter Schagerl , Hans-Joachim Schulze
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L21/265 ; H01L29/06 ; H01L21/306 ; H01L21/3063 ; H01L29/08 ; H01L29/36
Abstract:
One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the semiconductor body. Thereafter, a drift zone layer on the first side of the semiconductor body is formed. The following is an ablation of the semiconductor body from a second side of the semiconductor body and up to pn junction defined by impurities.
Public/Granted literature
- US20150076664A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE Public/Granted day:2015-03-19
Information query
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