Invention Grant
- Patent Title: Method for improving critical dimension variability by implanting argon or silicon ions into a patterned mask
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Application No.: US14925438Application Date: 2015-10-28
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Publication No.: US09613813B2Publication Date: 2017-04-04
- Inventor: Steven Robert Sherman , Todd Henry
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/266
- IPC: H01L21/266 ; H01L21/306 ; G03F7/20 ; H01L21/027 ; H01L21/66
Abstract:
Methods of processing a workpiece are disclosed. Variability of the critical dimension of semiconductor structures may be affected by the critical dimension of the patterned mask. Ions may be implanted into the patterned mask to change the critical dimension. The ions may be implanted in accordance with an ion implant map, which determines an appropriate dose, energy and type based on the measured critical dimension of the patterned mask at a plurality of locations.
Public/Granted literature
- US20160133467A1 Method For Improving Critical Dimension Variability Public/Granted day:2016-05-12
Information query
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