Invention Grant
- Patent Title: Process chamber, method of preparing a process chamber, and method of operating a process chamber
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Application No.: US14297918Application Date: 2014-06-06
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Publication No.: US09613819B2Publication Date: 2017-04-04
- Inventor: Yu Chao Lin , Ming-Ching Chang , Yuan-Sheng Huang , Jui-Ming Chen , Chao-Cheng Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/461
- IPC: H01L21/461 ; H01L21/3065 ; H01J37/32 ; C23C16/40 ; C23C16/509

Abstract:
Process chambers and methods of preparing and operating a process chamber are disclosed. In some embodiments, a method of preparing a process chamber for processing a substrate includes: forming a first barrier layer over an element disposed within a cavity of the process chamber, the element comprising an outgassing material; and forming, within the process chamber, a second barrier layer over the first barrier layer.
Public/Granted literature
- US20150357164A1 PROCESS CHAMBER, METHOD OF PREPARING A PROCESS CHAMBER, AND METHOD OF OPERATING A PROCESS CHAMBER Public/Granted day:2015-12-10
Information query
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