Invention Grant
- Patent Title: Method of forming patterns and method of manufacturing integrated circuit device
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Application No.: US14695047Application Date: 2015-04-24
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Publication No.: US09613821B2Publication Date: 2017-04-04
- Inventor: Yool Kang , Dong-won Kim , Ju-young Kim , Tae-hoon Kim , Hye-ji Kim , Su-min Park , Hyung-rae Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0072349 20140613
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/311 ; H01L21/02 ; H01L21/027 ; H01L21/033 ; H01L21/3213 ; H01L27/108 ; H01L21/768
Abstract:
Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.
Public/Granted literature
- US20150364334A1 METHOD OF FORMING PATTERNS AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE Public/Granted day:2015-12-17
Information query
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