Invention Grant
- Patent Title: Etching method
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Application No.: US15150937Application Date: 2016-05-10
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Publication No.: US09613824B2Publication Date: 2017-04-04
- Inventor: Yusuke Saitoh , Hironobu Ichikawa , Isao Tafusa
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2015-098800 20150514; JP2015-207301 20151021
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L27/11556 ; H01L27/11582
Abstract:
The etching method of one embodiment includes a first step of generating a plasma of a first processing gas containing a fluorocarbon gas and a hydrofluorocarbon gas in a processing container of a plasma processing apparatus, and a second step of generating a plasma of a second processing gas containing a hydrofluorocarbon gas and a nitrogen gas in the processing container. In the method, sequences each including the first step and the second step are performed. The plasma is continuously generated over the execution period for the first step and the execution period for the second step. In the second step, a ratio of the flow rate of a hydrogen gas to the flow rate of the second processing gas is set to be small in a period immediately before the execution period for the first step and a period immediately after the execution period for the first step.
Public/Granted literature
- US20160336191A1 ETCHING METHOD Public/Granted day:2016-11-17
Information query
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