Invention Grant
- Patent Title: Semiconductor process for treating metal gate
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Application No.: US14811852Application Date: 2015-07-29
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Publication No.: US09613826B2Publication Date: 2017-04-04
- Inventor: Cheng-Chi Tai , Chun-Ju Tao , Chung-Che Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/283
- IPC: H01L21/283 ; H01L21/3213 ; H01L29/51 ; H01L21/311 ; H01L29/66 ; H01L29/49 ; H01L21/768 ; H01L29/45
Abstract:
A semiconductor process for treating a metal gate includes the following steps. A metal gate including a main conductive material on a substrate is provided. A H2/N2 plasma treatment process is performed to reduce the main conductive material.
Public/Granted literature
- US20170032975A1 SEMICONDUCTOR PROCESS FOR TREATING METAL GATE Public/Granted day:2017-02-02
Information query
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