Invention Grant
- Patent Title: Dielectric structures with negative taper and methods of formation thereof
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Application No.: US14621082Application Date: 2015-02-12
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Publication No.: US09613848B2Publication Date: 2017-04-04
- Inventor: Manfred Engelhardt
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/762 ; H01L21/311 ; H01L21/02 ; H01L21/3105
Abstract:
A method for forming a dielectric structure includes forming an auxiliary layer over a substrate, and forming a hole within the auxiliary layer. A fill material is deposited into the hole. The auxiliary layer is removed to form the dielectric structure having a negative taper. The dielectric structure has a top critical dimension greater than a bottom critical dimension.
Public/Granted literature
- US20160240429A1 Dielectric Structures with Negative Taper and Methods of Formation Thereof Public/Granted day:2016-08-18
Information query
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