The present disclosure provides die cutting methods and semiconductor dies. A semiconductor substrate has a test region, isolation regions, and core regions. A device layer, an interconnection layer, and a soldering pad layer are formed on the semiconductor substrate. The soldering layer includes a plurality of soldering pads. A passivation layer covers the soldering pads and the interconnect layer, and is etched to form trenches on the soldering pads above the core regions and the test region. The passivation layer, the interconnect layer, and the device layer are etched to form isolation trenches at junctions of the isolation region and the test region, disconnecting the passivation layer, the interconnect layer and the device layer. A cutting process is performed along the test region, each of the semiconductor substrate, the device layer, the interconnect layer and the soldering pad layer is cut in two.