Invention Grant
- Patent Title: Semiconductor device having improved heat-dissipation characteristics
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Application No.: US14891629Application Date: 2014-05-09
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Publication No.: US09613881B2Publication Date: 2017-04-04
- Inventor: Heui Gyun Ahn , Sang Wook Ahn , Yong Woon Lee , Huy Chan Jung , Sung Chun Jun
- Applicant: SILICONFILE TECHNOLOGIES INC.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0054090 20130514
- International Application: PCT/KR2014/004180 WO 20140509
- International Announcement: WO2014/185665 WO 20141120
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L23/367 ; H01L25/065 ; H01L23/522 ; H01L23/58 ; H01L27/06
Abstract:
A semiconductor device having improved heat-dissipation characteristics is capable effectively discharging heat that is generated inside the semiconductor device of a three-dimensional laminated structure, to the outside of the semiconductor device by utilizing an internal connector used during bonding.
Public/Granted literature
- US20160086869A1 SEMICONDUCTOR DEVICE HAVING IMPROVED HEAT-DISSIPATION CHARACTERISTICS Public/Granted day:2016-03-24
Information query
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