Invention Grant
- Patent Title: Semiconductor device and semiconductor module
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Application No.: US14152796Application Date: 2014-01-10
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Publication No.: US09613888B2Publication Date: 2017-04-04
- Inventor: Rei Yoneyama , Hiroyuki Okabe , Nobuya Nishida , Taichi Obara
- Applicant: MITSUBISHI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2013-076525 20130402
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00

Abstract:
A semiconductor device in the preferred embodiment includes: a lead frame comprising a die pad and an electrode terminal; and at least one semiconductor chip bonded to a surface of the die pad, wherein the lead frame excluding a bottom surface thereof and the semiconductor chip are sealed by a sealing resin, and an unevenness is introduced on a bonding interface between the surface of the die pad and the semiconductor chip.
Public/Granted literature
- US20140291825A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE Public/Granted day:2014-10-02
Information query
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