Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14582733Application Date: 2014-12-24
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Publication No.: US09613922B2Publication Date: 2017-04-04
- Inventor: Yoshiyuki Kado , Takahiro Naito , Toshihiko Sato , Hikaru Ikegami , Takafumi Kikuchi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2001-172503 20010607
- Main IPC: H01L23/04
- IPC: H01L23/04 ; H01L25/18 ; H01L23/00 ; H01L23/31 ; H01L23/50 ; H01L23/538 ; H01L25/065 ; H01L23/28

Abstract:
Of three chips (2A), (2B), and (2C) mounted on a main surface of a package substrate (1) in a multi-chip module (MCM), a chip (2A) with a DRAM formed thereon and a chip (2B) with a flash memory formed thereon are electrically connected to wiring lines (5) of the package substrate (1) through Au bumps (4), and a gap formed between main surfaces (lower surfaces) of the chips (2A), (2B) and a main surface of the package substrate (1) is filled with an under-fill resin (6). A chip (2C) with a high-speed microprocessor formed thereon is mounted over the two chips (2A) and (2B) and is electrically connected to bonding pads (9) of the package substrate (1) through Au wires (8).
Public/Granted literature
- US20150108639A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-04-23
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