Invention Grant
- Patent Title: Exposed die power semiconductor device
-
Application No.: US14552442Application Date: 2014-11-24
-
Publication No.: US09613941B2Publication Date: 2017-04-04
- Inventor: Yanbo Xu , Zhijie Wang , Fei Zong
- Applicant: Yanbo Xu , Zhijie Wang , Fei Zong
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Agent Charles E. Bergere
- Priority: CN201410167761 20140306
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L25/18 ; H01L21/56 ; H01L23/31 ; H01L23/00 ; H01L25/00
Abstract:
A semiconductor package has a lead frame and a power die. The lead frame has a first die paddle with a cavity formed entirely therethrough. The power die, which has a lower surface, is mounted on the first die paddle such that a first portion of the lower surface is attached to the first die paddle using a solderless die-attach adhesive, and a second portion of the lower surface, is not attached to the first die paddle and abuts the cavity formed in the first die paddle such that the second portion is exposed.
Public/Granted literature
- US20150255443A1 EXPOSED DIE POWER SEMICONDUCTOR DEVICE Public/Granted day:2015-09-10
Information query
IPC分类:
