Invention Grant
- Patent Title: Semiconductor device and switching circuit
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Application No.: US14572890Application Date: 2014-12-17
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Publication No.: US09613944B2Publication Date: 2017-04-04
- Inventor: Masayuki Hanaoka
- Applicant: Sanken Electric Co., LTD.
- Applicant Address: JP Niiza-shi, Saitama
- Assignee: Sanken Electric Co., LTD.
- Current Assignee: Sanken Electric Co., LTD.
- Current Assignee Address: JP Niiza-shi, Saitama
- Agency: Banner & Witcoff, Ltd.
- Priority: JP2013-259830 20131217
- Main IPC: H03K3/00
- IPC: H03K3/00 ; H01L27/02 ; H03K17/567 ; H03K17/687 ; H01L27/06

Abstract:
A semiconductor device includes: a main switching element, a current-sensing switching element and a surge protection element, which are formed on a single semiconductor substrate, wherein the surge protection element is a bidirectional diode connected between a first main electrode of the main switching element and a first main electrode of the current-sensing switching element. Also, a switching circuit includes the semiconductor device and a detection resistor connected to the first main electrode of the current-sensing switching element; and a driving device that drives the semiconductor device based on a voltage drop occurring in the detection resistor when the semiconductor device is turned on.
Public/Granted literature
- US20150171070A1 Semiconductor Device and Switching Circuit Public/Granted day:2015-06-18
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