Invention Grant
- Patent Title: Monolithic microwave integrated circuit (MMIC) cascode connected transistor circuit
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Application No.: US14663974Application Date: 2015-03-20
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Publication No.: US09613947B2Publication Date: 2017-04-04
- Inventor: Thomas B. Reed
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/07 ; H01L29/417 ; H03F1/22 ; H03F3/195 ; H03F3/21

Abstract:
A cascode transistor circuit having an active region, the active region having a source, a drain, a floating source/drain, a first gate disposed between the source and the floating source/drain and a second gate disposed between the floating source/drain and the drain. A first gate pad is displaced from the active region and is electrically connected to the first gate and a second gate pad is displaced from the active region and is electrically connected to the second gate. The first and the second gate pads are disposed on opposite sides of the active region.
Public/Granted literature
- US20160276337A1 MONOLITHIC MICROWAVE INTEGRATED CIRCUIT (MMIC) CASCODE CONNECTED TRANSISTOR CIRCUIT Public/Granted day:2016-09-22
Information query
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