In a semiconductor device including an IGBT and a diode, an upper-side lifetime control region, which is provided in the drift region within a range located above an intermediate depth of the drift region, is provided in a diode area and is not provided in an IGBT area. A first inter-trench semiconductor region, which is adjacent to a second inter-trench semiconductor region in a diode area, includes a barrier region of an n-type located between the body region and the drift region and a pillar region of the n-type extending from a position being in contact with the upper electrode to a position being in contact with the barrier region. Each of the second inter-trench semiconductor regions in the diode area does not include the pillar region.