Invention Grant
- Patent Title: Hybrid circuit including a tunnel field-effect transistor
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Application No.: US14965019Application Date: 2015-12-10
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Publication No.: US09613955B1Publication Date: 2017-04-04
- Inventor: Brent A. Anderson , Tamilmani Ethirajan , Edward J. Nowak
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent L. Jeffrey Kelly
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L27/088 ; H01L29/66 ; H01L29/10 ; H01L21/8234

Abstract:
The present invention relates generally to integrated circuits and more particularly, to a structure and method of forming a hybrid circuit including a tunnel field-effect transistor (TFET) and a conventional field effect transistor (FET). Embodiments of the present invention include a hybrid amplifier which features a TFET common-source feeding a common-gate conventional FET (e.g. a MOSFET). A TFET gate may be electrically isolated from an output from a conventional FET. Thus, a high impedance input may be received by a TFET with a high-isolation output (i.e. low capacitance) at a conventional FET. A hybrid circuit amplifier including a TFET and a conventional FET may have a very high input impedance and a low miller capacitance.
Information query
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